PART |
Description |
Maker |
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
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SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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ARF475LF ARF475FL |
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs From old datasheet system RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
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ADPOW Advanced Power Technology
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STB60NE03L-10 5466 |
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N-CHANNEL Power MOSFET PC 8C 8#20 SKT RECP -通道增强型“特征尺寸单”功率MOSFET
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STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
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STP55NE06L STP55NE06LFP 5565 P55NE06L |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE] ” POWER MOSFET N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Search --To STP55NE06L
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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STP40NE03L-20 5372 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZEPOWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE POWER MOSFET
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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STP33N10FI STP33N10 3141 |
N-Channel Enhancement Mode Power MOS Transistor(N娌??澧?己妯″????MOSFET) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
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STMICROELECTRONICS[STMicroelectronics]
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MTP3N60FI MTP3N60 3037 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
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意法半导 STMicroelectronics Motorola, Inc
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STB5NA80 4891 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOS晶体 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 23A 0.450 Ohm
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Advanced Power Technology Ltd.
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APT6013B2FLL APT6013LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 43A 0.130 Ohm
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Advanced Power Technology, Ltd.
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APT5018BFLL APT5018SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗,高电压,N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS POWER MOS 7 500V 27A 0.180 Ohm
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Advanced Power Technology, Ltd.
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